AO4830 80v dual n-channel mosfet general description product summary v ds (v) = 80 v i d = 3.5a (v gs = 10v) (v gs = 10v) 100% uis tested 100% rg tested symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 48 62.5 74 90 r q jl 32 40 a repetitive avalanche energy l=0.1mh c 12.8 mj avalanche current c 16 pulsed drain current c continuous drain current t a =25c t a =70c junction and storage temperature range -55 to 150 c thermal characteristics t 10s c/w parameter r q ja units maximum junction-to-ambient a vv 30 gate-source voltage drain-source voltage 80 maximum units parameter absolute maximum ratings t a =25c unless otherwise noted the AO4830 uses advanced trench technology to provide excellent r ds(on) and low gate charge . this device is suitable for use as a load switch or in p wm applications. r ds(on) < 75m w a i d 3.5 2.9 18 power dissipation b p d w 2 t a =25c 1.3 t a =70c maximum junction-to-lead steady-state c/w steady-state c/w maximum junction-to-ambient a d g2 d2 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 top view soic-8 top view bottom view pin1 alpha & omega semiconductor, ltd. www.aosmd.com
AO4830 symbol min typ max units bv dss 80 v v ds =80v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 3.5 4.2 5 v i d(on) 18 a 62 75 t j =125c 113.0 135 g fs 15 s v sd 0.77 1 v i s 2.5 a i sm 18 a c iss 510 640 770 pf c oss 28 40 52 pf c rss 12 20 30 pf r g 0.9 1.8 2.7 w q g (10v) 8 11 13 nc q g (4.5v) 4 5.5 7 q gs 4 5 6 nc q gd 0.7 1.2 1.7 nc t d(on) 7.2 ns t r 2.2 ns t d(off) 17 ns t f 2 ns t rr 14 20 26 ns q rr 35 50 65 nc rev 1 : nov. 2010 components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =3.5a, di/dt=300a/ m s pulsed body-diode current c input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =40v, r l =8 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =40v, i d =3.5a gate source charge gate drain charge total gate charge switching parameters m w i s =1a,v gs =0v v ds =5v, i d =3.5a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 30v zero gate voltage drain current gate-body leakage current maximum body-diode continuous current body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =3.5a reverse transfer capacitance i f =3.5a, di/dt=300a/ m s v gs =0v, v ds =40v, f=1mhz a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with alpha & omega semiconductor, ltd. www.aosmd.com
AO4830 typical electrical and thermal characteristics 17 52 10 0 18 40 0 4 8 12 16 20 3 4 5 6 7 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 50 60 70 80 90 100 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =10v i d =3.5a 50 70 90 110 130 150 4 8 12 16 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =10v i d =3.5a 25c 125c 0 4 8 12 16 20 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) 6v 7v 10v 5.5v 5v alpha & omega semiconductor, ltd. www.aosmd.com
AO4830 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 0 20 40 60 80 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =40v i d =3.5a 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to-am bient (note f) power (w) t a =25c 10ms 100ms 1 10 100 0.000001 0.00001 0.0001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 10ms 100m t a =25c t a =150c t a =100c t a =125c alpha & omega semiconductor, ltd. www.aosmd.com
AO4830 typical electrical and thermal characteristics 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90c/w alpha & omega semiconductor, ltd. www.aosmd.com
AO4830 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr alpha & omega semiconductor, ltd. www.aosmd.com
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